Invention Grant
- Patent Title: Charged particle beam apparatus and method of correcting landing angle of charged particle beam
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Application No.: US14356166Application Date: 2012-11-06
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Publication No.: US09679744B2Publication Date: 2017-06-13
- Inventor: Masumi Shirai
- Applicant: Hitachi High-Technologies Corporation
- Applicant Address: JP Tokyo
- Assignee: Hitachi High-Technologies Corporation
- Current Assignee: Hitachi High-Technologies Corporation
- Current Assignee Address: JP Tokyo
- Agency: Miles & Stockbridge P.C.
- Priority: JP2011-244144 20111108
- International Application: PCT/JP2012/078727 WO 20121106
- International Announcement: WO2013/069636 WO 20130516
- Main IPC: H01J37/28
- IPC: H01J37/28 ; G01B15/00 ; H01J37/147 ; H01J37/20 ; H01J37/22

Abstract:
A scanning electron microscope (SEM) is configured so that SEM images are acquired while scanning a pyramid pattern on a sample plane from four directions. Landing angle of the electron beam is calculated from these SEM images, which are then averaged, whereby inclination angle of the electron beam that is less influenced from scan distortion can be found.
Public/Granted literature
- US20150053855A1 CHARGED PARTICLE BEAM APPARATUS AND METHOD OF CORRECTING LANDING ANGLE OF CHARGED PARTICLE BEAM Public/Granted day:2015-02-26
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