Invention Grant
- Patent Title: FinFET device having a material formed on reduced source/drain region and method of forming the same
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Application No.: US14842773Application Date: 2015-09-01
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Publication No.: US09673325B2Publication Date: 2017-06-06
- Inventor: Xinyun Xie
- Applicant: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION
- Applicant Address: CN Shanghai
- Assignee: Semiconductor Manufacturing International (Shanghai) Corporation
- Current Assignee: Semiconductor Manufacturing International (Shanghai) Corporation
- Current Assignee Address: CN Shanghai
- Agency: Kilpatrick Townsend & Stockton LLP
- Priority: CN201410500106 20140926
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L21/336 ; H01L29/76 ; H01L29/78 ; H01L21/306 ; H01L29/66 ; H01L29/165 ; H01L21/8238
Abstract:
A semiconductor device includes a fin structure of a first semiconductor material on a substrate. The fin structure has a source region, a drain region, and a channel region between the source region and the drain region. The device also has a gate structure overlying the fin structure. The source region includes an inner portion of the first semiconductor material and an outer portion of a second semiconductor material overlying a top surface and side surfaces of the inner portion. The drain region includes an inner portion of the first semiconductor material and an outer portion of the second semiconductor material overlying a top surface and side surfaces of the inner portion.
Public/Granted literature
- US20160093738A1 METHODS FOR FINFET SOURCE/DRAIN FORMATION AND FINFET DEVICES Public/Granted day:2016-03-31
Information query
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