Invention Grant
- Patent Title: Bipolar transistor structure and a method of manufacturing a bipolar transistor structure
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Application No.: US15063541Application Date: 2016-03-08
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Publication No.: US09673294B2Publication Date: 2017-06-06
- Inventor: Dmitri Alex Tschumakow , Claus Dahl , Armin Tilke
- Applicant: Infineon Technologies Dresden GmbH
- Applicant Address: DE Dresden
- Assignee: INFINEON TECHNOLOGIES DRESDEN GMBH
- Current Assignee: INFINEON TECHNOLOGIES DRESDEN GMBH
- Current Assignee Address: DE Dresden
- Agency: Viering, Jentschura & Partner mbB
- Main IPC: H01L21/331
- IPC: H01L21/331 ; H01L29/66 ; H01L29/417 ; H01L29/423 ; H01L29/732 ; H01L29/737 ; H01L29/06 ; H01L21/02 ; H01L21/265 ; H01L21/324 ; H01L29/08 ; H01L29/10 ; H01L29/165
Abstract:
According to various embodiments, a bipolar transistor structure may include: a substrate; a collector region in the substrate; a base region disposed over the collector region, an emitter region disposed over the base region; a base terminal laterally electrically contacting the base region, wherein the base terminal includes polysilicon.
Public/Granted literature
- US20160190277A1 BIPOLAR TRANSISTOR STRUCTURE AND A METHOD OF MANUFACTURING A BIPOLAR TRANSISTOR STRUCTURE Public/Granted day:2016-06-30
Information query
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