Invention Grant
- Patent Title: Vertical thin film transistors with surround gates
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Application No.: US15172483Application Date: 2016-06-03
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Publication No.: US09673257B1Publication Date: 2017-06-06
- Inventor: Seje Takaki , Manabu Hayashi , Akira Nakada , Ryousuke Itou , Takuro Maede , Kengo Kajiwara , Tetsuya Yamada
- Applicant: SanDisk Technologies LLC
- Applicant Address: US TX Plano
- Assignee: SanDisk Technologies LLC
- Current Assignee: SanDisk Technologies LLC
- Current Assignee Address: US TX Plano
- Agency: Vierra Magen Marcus LLP
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L27/24 ; H01L29/66 ; H01L29/51 ; H01L45/00 ; H01L27/11582 ; H01L27/1157 ; H01L23/528 ; H01L29/786 ; G11C16/04 ; G11C16/08 ; G11C16/10 ; G11C16/26 ; G11C13/00 ; H01L29/423 ; H01L29/417
Abstract:
A method is provided that includes forming a transistor by forming a first a rail gate disposed in a first direction above a substrate, forming a second rail gate disposed in a second direction above the substrate, the second direction perpendicular to the first direction, and forming a bridge section disposed between the first rail gate and the second rail gate.
Information query
IPC分类:
