The present disclosure provides a method for fabricating an integrated circuit in accordance with some embodiments. The method includes forming a trench on a semiconductor substrate, thereby defining fin active regions; extracting a profile of the fin active regions; determining an etch dosage according to the profile of the fin active regions; filling in the trench with a dielectric material; and performing an etching process to the dielectric material using the etch dosage, thereby recessing the dielectric material and defining a fin height of the fin active regions.