Invention Grant
- Patent Title: Group III nitride substrates and their fabrication method
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Application No.: US14959565Application Date: 2015-12-04
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Publication No.: US09673044B2Publication Date: 2017-06-06
- Inventor: Tadao Hashimoto
- Applicant: SIXPOINT MATERIALS, INC. , SEOUL SEMICONDUCTOR CO., LTD.
- Applicant Address: US CA Buellton
- Assignee: SixPoint Materials, Inc.
- Current Assignee: SixPoint Materials, Inc.
- Current Assignee Address: US CA Buellton
- Agency: Strategic Innovation IP Law Offices, P.C.
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/02 ; H01L21/78 ; H01L21/324 ; H01L21/304 ; H01L29/04 ; H01L29/20
Abstract:
Group III nitride substrate having a first side of nonpolar or semipolar plane and a second side has more than one stripe of metal buried, wherein the stripes are perpendicular to group III nitride's c-axis. More than 90% of stacking faults exist over metal stripes. Second side may expose a nonpolar or semipolar plane. Also disclosed is a group III nitride substrate having a first side of nonpolar or semipolar plane and a second side with exposed nonpolar or semipolar plane. The substrate contains bundles of stacking faults with spacing larger than 1 mm. The invention also provides methods of fabricating the group III nitride substrates above.
Public/Granted literature
- US20160163541A1 GROUP III NITRIDE SUBSTRATES AND THEIR FABRICATION METHOD Public/Granted day:2016-06-09
Information query
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