Invention Grant
- Patent Title: Test apparatus and plasma processing apparatus
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Application No.: US14161538Application Date: 2014-01-22
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Publication No.: US09673027B2Publication Date: 2017-06-06
- Inventor: Takashi Yamamoto , Junichi Shimada
- Applicant: TOKYO ELECTRON LIMITED
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Agency: Rothwell, Figg, Ernst & Manbeck, P.C.
- Priority: JP2013-010968 20130124
- Main IPC: H01J37/32
- IPC: H01J37/32 ; H01L21/66

Abstract:
A test apparatus for efficiently and accurately testing a high frequency voltage dependency of an impedance of a test object without damaging the test object. The test apparatus includes a high frequency power source unit, a reference waveform generator, a matching device, an oscilloscope, a control panel, and a main control unit. The test apparatus may boost a high frequency pulse output at a relatively low power from the high frequency power source unit to a voltage required for a high frequency withstand voltage test to be applied to a test object in a state where impedance matching is performed between the high frequency power source unit and the test by the matching device, that is, under a tuned state. Whether the waveform of the voltage applied to the test object is a defined waveform may be concisely monitored and observed by the oscilloscope.
Public/Granted literature
- US20140203821A1 TEST APPARATUS AND PLASMA PROCESSING APPARATUS Public/Granted day:2014-07-24
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