Invention Grant
- Patent Title: Apparatuses and methods for setting a signal in variable resistance memory
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Application No.: US15388971Application Date: 2016-12-22
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Publication No.: US09672888B2Publication Date: 2017-06-06
- Inventor: Alessandro Sanasi
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman Lundberg & Woessner, P.A.
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C11/16

Abstract:
An example of a method reads a spin torque transfer (STT) memory cell, and writes the STT memory cell using information obtained during the reading of the STT memory cell to set a pulse to write the STT memory cell. An example of an apparatus includes a STT memory cell and read/write circuitry coupled to the STT memory cell to determine a read current (IREAD) through the STT memory cell and to set a pulse to write the STT memory cell using IREAD. Additional embodiments are disclosed.
Public/Granted literature
- US20170103794A1 APPARATUSES AND METHODS FOR SETTING A SIGNAL IN VARIABLE RESISTANCE MEMORY Public/Granted day:2017-04-13
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