Invention Grant
- Patent Title: Transistor circuit of low shutoff-state current
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Application No.: US14735820Application Date: 2015-06-10
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Publication No.: US09660529B2Publication Date: 2017-05-23
- Inventor: Qiang Su , Jiangtao Yi
- Applicant: SMARTER MICROELECTRONICS (GUANG ZHOU) CO., LTD.
- Applicant Address: CN Guangzhou
- Assignee: SMARTER MICROELECTRONICS (GUANG ZHOU) CO., LTD.
- Current Assignee: SMARTER MICROELECTRONICS (GUANG ZHOU) CO., LTD.
- Current Assignee Address: CN Guangzhou
- Agency: Syncoda LLC
- Agent Feng Ma; Junjie Feng
- Priority: CN201210548838 20121213
- Main IPC: H02M3/158
- IPC: H02M3/158 ; H03K17/10 ; H03K17/06

Abstract:
A transistor circuit of low shutoff-state current includes: a first transistor, a transistor string, and a switch. The first transistor and the transistor string are connected in series. The switch is configured to shut off the circuit. The first transistor is configured to reduce the shutoff-state current flowing therethrough using the negative feedback effect of the transistor string when the circuit is in a shutoff state; and the transistor string is configured to reduce the shutoff-state current flowing therethrough using a negative gate-source electrode voltage difference thereof and the bulk effect of the transistor.
Public/Granted literature
- US20150280570A1 TRANSISTOR CIRCUIT OF LOW SHUTOFF-STATE CURRENT Public/Granted day:2015-10-01
Information query
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