Invention Grant
- Patent Title: High-frequency power supply device
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Application No.: US14825325Application Date: 2015-08-13
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Publication No.: US09648719B2Publication Date: 2017-05-09
- Inventor: Toshiya Habu
- Applicant: SHIMADZU CORPORATION
- Applicant Address: JP Kyoto-shi, Kyoto
- Assignee: SHIMADZU CORPORATION
- Current Assignee: SHIMADZU CORPORATION
- Current Assignee Address: JP Kyoto-shi, Kyoto
- Agency: Sughrue Mion, PLLC
- Priority: JP2014-178880 20140903
- Main IPC: G01J3/02
- IPC: G01J3/02 ; H01J37/244 ; H01J37/32 ; H05H1/00 ; H05H1/36 ; H05H1/46

Abstract:
A high-frequency input voltage and a high-frequency input current to a series resonant circuit are detected by a voltage detection unit and a current detection unit, respectively, and plasma input power is detected by a plasma input power detection unit based on the detected high-frequency input voltage and high-frequency input current. By directly detecting the plasma input power in this manner, the plasma input power may be accurately controlled regardless of the state of a plasma-generating gas or an analysis sample. Also, use of a switching circuit including a semiconductor device allows an inexpensive configuration compared with a configuration where a vacuum tube or the like is used.
Public/Granted literature
- US20160066405A1 HIGH-FREQUENCY POWER SUPPLY DEVICE Public/Granted day:2016-03-03
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