Invention Grant
- Patent Title: Power amplifier module
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Application No.: US14560036Application Date: 2014-12-04
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Publication No.: US09647616B2Publication Date: 2017-05-09
- Inventor: Kenji Saito
- Applicant: Murata Manufacturing Co., Ltd.
- Applicant Address: JP Kyoto
- Assignee: MURATA MANUFACTURING CO., LTD.
- Current Assignee: MURATA MANUFACTURING CO., LTD.
- Current Assignee Address: JP Kyoto
- Agency: Pearne & Gordon, LLP
- Priority: JP2013-270071 20131226
- Main IPC: H03G3/00
- IPC: H03G3/00 ; H03F3/21 ; H03F3/19 ; H03F1/02 ; H03F1/56 ; H03F3/24 ; H03G1/00

Abstract:
A power amplifier module includes a first bipolar transistor configured to amplify a radio frequency signal and output an amplified signal and a second bipolar transistor. A base of the second bipolar transistor is supplied with a control voltage for controlling attenuation of the radio frequency signal, and a collector the second bipolar transistor is supplied with a source voltage. The power amplifier module also includes a first resistor, where one end of the first resistor is connected to a supply path of the radio frequency signal to the first bipolar transistor, and a capacitor, where one end of the capacitor is connected to the other end of the first resistor and the other end of the capacitor is connected to the collector of the second bipolar transistor.
Public/Granted literature
- US20150188505A1 POWER AMPLIFIER MODULE Public/Granted day:2015-07-02
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