Invention Grant
- Patent Title: Electrostatic discharge protection for level-shifter circuit
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Application No.: US15273187Application Date: 2016-09-22
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Publication No.: US09647452B2Publication Date: 2017-05-09
- Inventor: Chia-Hui Chen , Chia-Hung Chu , Kuo-Ji Chen , Ming-Hsiang Song , Lee-Chung Lu
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: H02H9/04
- IPC: H02H9/04 ; H01L27/02 ; H03K19/0175 ; H03K19/003

Abstract:
In some embodiments, a method includes providing an input voltage to a level-shifting circuit, where the input voltage is in a first power domain, shifting the input voltage to an output voltage using the level-shifting circuit, where the output voltage is in a second power domain different from the first power domain, and where the level-shifting circuit is coupled to power supply voltages in the second power domain. The method further includes in response to an electrostatic discharge (ESD) event, turning off a first transistor coupled between a first node of the level-shifting circuit and a reference low voltage level of the second power domain.
Public/Granted literature
- US20170012038A1 Electrostatic Discharge Protection for Level-Shifter Circuit Public/Granted day:2017-01-12
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