Invention Grant
- Patent Title: Method of manufacturing optical semiconductor device
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Application No.: US15246744Application Date: 2016-08-25
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Publication No.: US09647425B1Publication Date: 2017-05-09
- Inventor: Naoki Nakamura
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- Priority: JP2015-252124 20151224
- Main IPC: H01L33/60
- IPC: H01L33/60 ; H01S5/323 ; H01S5/227 ; H01S5/026 ; H01L33/14 ; H01L33/10 ; H01L33/00

Abstract:
A refractive index of the active layer is obtained by a photoluminescence inspection and an equivalent refractive index of the optical semiconductor element is computed. A refractive index of the optical waveguide layer is obtained by a photoluminescence inspection and an equivalent refractive index of the optical waveguide is computed. A film thickness of the refractive index adjustment layer is adjusted by etching the refractive index adjustment layer so that the equivalent refractive index of the optical semiconductor element and the equivalent refractive index of the optical waveguide are matched to each other. After adjusting the film thickness of the refractive index adjustment layer, a contact layer is formed on the second cladding layer and the refractive index adjustment layer. The optical waveguide is a passive waveguide to which no electrical field is applied and no current is injected.
Information query
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