A resistive random access memory (RRAM) cell with a high κ layer based on a group-V oxide and hafnium oxide is provided. The RRAM cell includes a bottom electrode layer, a group-V oxide layer arranged over the bottom electrode layer, and a hafnium oxide based layer arranged over and abutting the group-V oxide layer. The RRAM cell further includes a capping layer arranged over and abutting the hafnium oxide based layer, and a top electrode layer arranged over the capping layer. A method for manufacturing the RRAM cell is also provided.