Invention Grant
- Patent Title: Magnetic memory devices
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Application No.: US14729536Application Date: 2015-06-03
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Publication No.: US09647201B2Publication Date: 2017-05-09
- Inventor: Jongchul Park , Kyung Rae Byun
- Applicant: Jongchul Park , Kyung Rae Byun
- Applicant Address: KR Gyeonggi-Do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Gyeonggi-Do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2014-0129348 20140926
- Main IPC: H01L29/82
- IPC: H01L29/82 ; H01L43/08 ; G11C11/16 ; H01L27/22 ; H01L43/12
Abstract:
The inventive concepts provide magnetic memory devices. The device includes a first magnetic pattern provided in one united body on a substrate and having a plurality of through-holes, a plurality of second magnetic patterns spaced apart from each other on the first magnetic pattern, a tunnel barrier between the first magnetic pattern and the second magnetic patterns, top electrodes disposed on the second magnetic patterns, respectively, and a plurality of plugs electrically connecting the top electrodes to the substrate through the through-holes, respectively.
Public/Granted literature
- US20160093799A1 MAGNETIC MEMORY DEVICES Public/Granted day:2016-03-31
Information query
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