Invention Grant
- Patent Title: Semiconductor optoelectronic device with an insulative protection layer and the manufacturing method thereof
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Application No.: US15079812Application Date: 2016-03-24
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Publication No.: US09647177B2Publication Date: 2017-05-09
- Inventor: Chiu-Lin Yao , Chih-Chiang Lu
- Applicant: Epistar Corporation
- Applicant Address: TW Hsinchu
- Assignee: Epistar Corporation
- Current Assignee: Epistar Corporation
- Current Assignee Address: TW Hsinchu
- Agency: Muncy, Geissler, Olds & Lowe, P.C.
- Priority: TW098146164A 20091230
- Main IPC: H01L33/10
- IPC: H01L33/10 ; H01L33/46 ; H01L33/00 ; H01L25/075 ; H01L33/64 ; H01L33/44 ; H01L33/62
Abstract:
The present disclosure is to provide an optoelectronic device. The optoelectronic device comprises a heat dispersion substrate; an insulative protection layer on the heat dispersion substrate, wherein the insulative protection layer comprises AlInGaN series material; and an optoelectronic unit comprising an epitaxial structure comprising multiple layers on the insulative protection layer, wherein at least one layer of the epitaxial structure comprises III-V group material devoid of nitride.
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