The present techniques provide a method for producing a Group III nitride semiconductor light-emitting device, with suppression of an increase in polarity inversion defect density. The production method includes an n-type semiconductor layer formation step, a light-emitting layer formation step, and a p-type semiconductor layer formation step. The p-type semiconductor layer formation step includes a p-type cladding layer formation step. The p-type cladding layer formation step includes a first p-type semiconductor layer formation step for forming a p-type AlGaN layer, a first semiconductor layer growth intermission step after the first p-type semiconductor layer formation step, and a p-type InGaN layer formation step after the first semiconductor layer growth intermission step. In the first semiconductor layer growth intermission step, a mixture of nitrogen gas and hydrogen gas is supplied to the substrate.