Invention Grant
- Patent Title: Semiconductor device, power circuit, and manufacturing method of semiconductor device
-
Application No.: US14873249Application Date: 2015-10-02
-
Publication No.: US09647131B2Publication Date: 2017-05-09
- Inventor: Shunpei Yamazaki , Kei Takahashi , Yoshiaki Ito
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Fish & Richardson P.C.
- Priority: JP2009-218816 20090924
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L29/66 ; H01L29/04 ; H01L29/24 ; H01L29/417 ; H01L29/423 ; H01L21/02
Abstract:
The semiconductor device includes a first conductive layer over a substrate; an oxide semiconductor layer which covers the first conductive layer; a second conductive layer in a region which is not overlapped with the first conductive layer over the oxide semiconductor layer; an insulating layer which covers the oxide semiconductor layer and the second conductive layer; and a third conductive layer in a region including at least a region which is not overlapped with the first conductive layer or the second conductive layer over the insulating layer.
Public/Granted literature
- US20160027922A1 Semiconductor Device, Power Circuit, And Manufacturing Method Of Semiconductor Device Public/Granted day:2016-01-28
Information query
IPC分类:
