Invention Grant
- Patent Title: Semiconductor device and method of forming the same
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Application No.: US15154982Application Date: 2016-05-14
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Publication No.: US09647122B2Publication Date: 2017-05-09
- Inventor: Chia-Ming Chang , Chi-Wen Liu , Hsin-Chieh Huang , Cheng-Chien Li
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/66 ; H01L21/36 ; H01L29/06 ; H01L29/49 ; H01L29/40
Abstract:
A semiconductor device includes a substrate, at least one semiconductor fin, and at least one epitaxy structure. The semiconductor fin is present on the substrate. The semiconductor fin has at least one recess thereon. The epitaxy structure is present in the recess of the semiconductor fin. A topmost location of the epitaxy structure has an n-type impurity concentration lower than an n-type impurity concentration of a location of the epitaxy structure below the topmost location.
Public/Granted literature
- US20170077305A1 SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME Public/Granted day:2017-03-16
Information query
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