Invention Grant
- Patent Title: Device having EPI film in substrate trench
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Application No.: US14952674Application Date: 2015-11-25
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Publication No.: US09647118B2Publication Date: 2017-05-09
- Inventor: Jeff J. Xu
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manaufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manaufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/02 ; H01L21/3065 ; H01L21/8238 ; H01L29/04 ; H01L29/16 ; H01L29/165 ; H01L29/20 ; H01L29/32 ; H01L21/84 ; H01L29/66
Abstract:
The present disclosure provides a method of fabricating a semiconductor device that includes providing a semiconductor substrate, forming a trench in the substrate, where a bottom surface of the trench has a first crystal plane orientation and a side surface of the trench has a second crystal plane orientation, and epitaxially (epi) growing a semiconductor material in the trench. The epi process utilizes an etch component. A first growth rate on the first crystal plane orientation is different from a second growth rate on the second crystal plane orientation.
Public/Granted literature
- US20160079425A1 DEVICE HAVING EPI FILM IN SUBSTRATE TRENCH Public/Granted day:2016-03-17
Information query
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