A method of forming a strained vertical p-type field effect transistor, including forming a counter-doped layer at a surface of a substrate, forming a source/drain layer on the counter-doped layer, forming one or more vertical fins on the source/drain layer, removing a portion of the source/drain layer to form one or more bottom source/drains below each of the one or more vertical fins, reacting an exposed portion of each of the one or more bottom source/drains with a reactant to form a disposable layer on opposite sides of each bottom source/drain and a condensation layer between the two adjacent disposable layers, and removing the disposable layers.