Provided are silicene material layers and electronic devices having a silicene material layer. The silicene material layer contains silicon atoms in a 2-dimensional honeycomb structure formed as one of a monolayer and a double layer. The silicene material layer includes a doping region doped with at least one material from the group of Group 1, Group 2, Group 16 and Group 17 and at least one of a p-type dopant or an n-type dopant.