Invention Grant
- Patent Title: Semiconductor device and method for manufacturing the same
-
Application No.: US15044422Application Date: 2016-02-16
-
Publication No.: US09647095B2Publication Date: 2017-05-09
- Inventor: Shunpei Yamazaki , Hideomi Suzawa
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office
- Agent Eric J. Robinson
- Priority: JP2012-230351 20121017; JP2012-244907 20121106
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L29/66 ; H01L29/26 ; H01L21/02 ; H01L21/467 ; H01L21/477 ; H01L29/24
Abstract:
A semiconductor device formed using an oxide semiconductor layer and having small electrical characteristic variation is provided. A highly reliable semiconductor device including an oxide semiconductor layer and exhibiting stable electric characteristics is provided. Further, a method for manufacturing the semiconductor device is provided. In the semiconductor device, an oxide semiconductor layer is used for a channel formation region, a multilayer film which includes an oxide layer in which the oxide semiconductor layer is wrapped is provided, and an edge of the multilayer film has a curvature in a cross section.
Public/Granted literature
- US20160163839A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2016-06-09
Information query
IPC分类:
