Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
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Application No.: US14966866Application Date: 2015-12-11
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Publication No.: US09647084B2Publication Date: 2017-05-09
- Inventor: Shirou Ozaki , Naoya Okamoto , Kozo Makiyama , Toshihiro Ohki
- Applicant: FUJITSU LIMITED
- Applicant Address: JP Kawasaki
- Assignee: FUJITSU LIMITED
- Current Assignee: FUJITSU LIMITED
- Current Assignee Address: JP Kawasaki
- Agency: Kratz, Quintos & Hanson, LLP
- Priority: JP2013-086099 20130416
- Main IPC: H02M5/45
- IPC: H02M5/45 ; H01L29/66 ; H01L29/40 ; H01L21/768 ; H01L29/778 ; H01L29/205 ; H01L23/31 ; H01L29/20 ; H01L23/532 ; H01L21/283 ; H01L21/764 ; H02M5/458 ; H03F3/19 ; H01L23/522 ; H01L29/78
Abstract:
A semiconductor device includes: a first electrode; a second electrode; an interlayer insulating film made of a porous insulating material and formed above the first electrode and the second electrode; and connection parts electrically connected to the first electrode and the second electrode respectively, wherein a cavity is formed between the interlayer insulating film and a surface of the first electrode, a surface of the second electrode, and parts of surfaces of the connection parts.
Public/Granted literature
- US20160099335A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2016-04-07
Information query
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