Invention Grant
- Patent Title: Circuit including semiconductor device with multiple individually biased space-charge control electrodes
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Application No.: US15096930Application Date: 2016-04-12
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Publication No.: US09647076B2Publication Date: 2017-05-09
- Inventor: Grigory Simin , Michael Shur , Remigijus Gaska
- Applicant: Sensor Electronic Technology, Inc.
- Applicant Address: US SC Columbia
- Assignee: Sensor Electronic Technology, Inc.
- Current Assignee: Sensor Electronic Technology, Inc.
- Current Assignee Address: US SC Columbia
- Agency: LaBatt, LLC
- Main IPC: H01L29/02
- IPC: H01L29/02 ; H01L29/40 ; H01L29/778 ; H01L29/872 ; H01L29/06 ; H01L29/20 ; H01L29/417
Abstract:
A circuit including a semiconductor device having a set of space-charge control electrodes is provided. The set of space-charge control electrodes is located between a first terminal, such as a gate or a cathode, and a second terminal, such as a drain or an anode, of the device. The circuit includes a biasing network, which supplies an individual bias voltage to each of the set of space-charge control electrodes. The bias voltage for each space-charge control electrode can be: selected based on the bias voltages of each of the terminals and a location of the space-charge control electrode relative to the terminals and/or configured to deplete a region of the channel under the corresponding space-charge control electrode at an operating voltage applied to the second terminal.
Public/Granted literature
- US20160225863A1 Semiconductor Device with Multiple Space-Charge Control Electrodes Public/Granted day:2016-08-04
Information query
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