A silicon carbide semiconductor device has a silicon carbide substrate, a gate insulating film, and a gate electrode. Silicon carbide substrate includes a first impurity region having a first conductivity type, a well region being in contact with the first impurity region and having a second conductivity type which is different from the first conductivity type, and a second impurity region separated from the first impurity region by the well region and having the first conductivity type. The gate insulating film is in contact with the first impurity region and the well region. The gate electrode is in contact with the gate insulating film and is arranged opposite to the well region with respect to the gate insulating film. A specific on-resistance at a voltage which is half a gate driving voltage applied to the gate electrode is smaller than twice the specific on-resistance at the gate driving voltage.