Invention Grant
- Patent Title: Silicon nanowire formation in replacement metal gate process
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Application No.: US14805669Application Date: 2015-07-22
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Publication No.: US09647062B2Publication Date: 2017-05-09
- Inventor: Chia-Yu Chen , Zuoguang Liu , Tenko Yamashita
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Cantor Colburn LLP
- Agent Vazken Alexanian
- Main IPC: H01L21/8242
- IPC: H01L21/8242 ; H01L29/06 ; H01L29/66 ; H01L21/3105 ; H01L21/02 ; H01L21/3065 ; H01L21/28 ; H01L21/306 ; H01L29/78 ; H01L29/49 ; H01L29/423 ; H01L29/51 ; B82Y10/00 ; B82Y40/00 ; H01L29/775 ; H01L21/308
Abstract:
Techniques for a semiconductor device are provided. Techniques are directed to forming a semiconductor device by: forming a fin structure in a substrate, forming a protective layer over an upper portion of the fin structure, the protective layer having an etch selectivity with respect to a material of the fin structure, and performing an undercut etch so as to remove a lower portion of the fin structure below the protective layer, thereby defining a nanowire structure from the fin structure.
Public/Granted literature
- US20150364544A1 SILICON NANOWIRE FORMATION IN REPLACEMENT METAL GATE PROCESS Public/Granted day:2015-12-17
Information query
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