Invention Grant
- Patent Title: Image pickup device and method of manufacturing the same
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Application No.: US15019089Application Date: 2016-02-09
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Publication No.: US09647023B2Publication Date: 2017-05-09
- Inventor: Yasutaka Okada
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Tokyo
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Tokyo
- Agency: Shapiro, Gabor and Rosenberger, PLLC
- Priority: JP2015-024059 20150210
- Main IPC: H01L27/148
- IPC: H01L27/148 ; H01L27/146
Abstract:
A P-type well is defined by an isolation region formed in a semiconductor substrate. A pixel region and a ground region are defined in the P-type well. In the pixel region, a pixel transistor region and a photodiode region having a photodiode formed therein are defined. An antireflection film is formed so as to cover at least the photodiode region and the ground region. A plug connected to the ground region is formed so as to extend through the antireflection film and the like.
Public/Granted literature
- US20160233263A1 Image Pickup Device and Method of Manufacturing the Same Public/Granted day:2016-08-11
Information query
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