Invention Grant
- Patent Title: Semiconductor devices and manufacturing methods thereof
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Application No.: US15197497Application Date: 2016-06-29
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Publication No.: US09646994B2Publication Date: 2017-05-09
- Inventor: Chee-Wee Liu , Hung-Chih Chang , Cheng-Yi Peng , Chih-Sheng Chang
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: H01L21/70
- IPC: H01L21/70 ; H01L27/12 ; H01L27/092 ; H01L29/06 ; H01L21/8238 ; H01L21/84 ; H01L23/535 ; H01L21/822 ; H01L27/06
Abstract:
Semiconductor devices and methods of manufacture thereof are disclosed. In some embodiments, a semiconductor device includes a first fin field effect transistor (FinFET) disposed over a substrate, and a second FinFET device disposed over the first FinFET. A junction isolation material is disposed between a source of the first FinFET and a source of the second FinFET.
Public/Granted literature
- US20160307928A1 Semiconductor Devices and Manufacturing Methods Thereof Public/Granted day:2016-10-20
Information query
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