Invention Grant
- Patent Title: Semiconductor memory device and method for manufacturing same
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Application No.: US14845944Application Date: 2015-09-04
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Publication No.: US09646988B2Publication Date: 2017-05-09
- Inventor: Sadatoshi Murakami , Hiroomi Nakajima
- Applicant: Kabushiki Kaisha Toshiba
- Applicant Address: JP Minato-ku
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Main IPC: H01L29/792
- IPC: H01L29/792 ; H01L21/336 ; H01L27/11582 ; H01L21/28 ; H01L27/11573 ; H01L29/66 ; H01L27/11568 ; H01L29/423 ; H01L21/8238 ; H01L27/11578 ; H01L21/8234 ; H01L27/11575
Abstract:
According to one embodiment, a semiconductor memory device includes a substrate; a stacked body provided on the substrate, the stacked body including a plurality of electrode layers and a first step portion, the first step portion having the plurality of electrode layers provided stepwise; a column provided in a region of the stacked body other than a region in the first step portion provided; and a plurality of insulating portions provided in the first step portion. The stacked body includes a metal silicide portion provided between the plurality of insulating portions and the plurality of electrode layers, a plurality of terraces provided on a top surface of each of the plurality of electrode layers of the first step portion, and a plurality of contact portions provided on the plurality of terraces.
Public/Granted literature
- US20160268297A1 SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME Public/Granted day:2016-09-15
Information query
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