Invention Grant
- Patent Title: Semiconductor memory device and production method thereof
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Application No.: US14817748Application Date: 2015-08-04
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Publication No.: US09646987B2Publication Date: 2017-05-09
- Inventor: Takashi Watanabe
- Applicant: KABUSHIKI KAISHA TOSHIBA
- Applicant Address: JP Minato-ku
- Assignee: KABUSHIKI KAISHA TOSHIBA
- Current Assignee: KABUSHIKI KAISHA TOSHIBA
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Main IPC: H01L27/11556
- IPC: H01L27/11556 ; H01L27/11582 ; H01L23/528 ; H01L21/3213 ; H01L21/311 ; H01L21/027 ; H01L21/8239
Abstract:
A semiconductor memory device according to an embodiment comprises a memory cell array including a stacked body and a semiconductor film, the stacked body including first layers stacked in a third direction, the semiconductor film having a side surface facing the first layers, and the semiconductor film extending in the third direction. The stacked body has a first portion and a second portion, the first portion having a first end which is an end in a first direction, and the first portion having the semiconductor film disposed therein, and a second portion being positioned on a side of the first end of the first portion, and the second portion having disposed therein a connecting line that contacts one of the first layers and extends in the third direction. The second portion has a projecting portion that projects further in the second direction than the first portion.
Public/Granted literature
- US20160358935A1 SEMICONDUCTOR MEMORY DEVICE AND PRODUCTION METHOD THEREOF Public/Granted day:2016-12-08
Information query
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