Invention Grant
- Patent Title: Semiconductor memory device and method of fabricating the same
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Application No.: US14453370Application Date: 2014-08-06
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Publication No.: US09646986B2Publication Date: 2017-05-09
- Inventor: Young Jin Lee
- Applicant: SK hynix Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2014-0033681 20140321
- Main IPC: H01L27/11582
- IPC: H01L27/11582 ; H01L27/11568 ; H01L27/115 ; H01L29/49 ; H01L29/45 ; H01L29/792 ; H01L27/1157 ; H01L21/02
Abstract:
A semiconductor memory device includes insulating patterns and conductive patterns stacked alternately with each other, penetrating structures passing through the insulating patterns and the conductive patterns, and deposition suppressing layers formed on one end portions of respective interfaces between the insulating patterns and the conductive patterns.
Public/Granted literature
- US20150270281A1 SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME Public/Granted day:2015-09-24
Information query
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