Invention Grant
- Patent Title: Monolithically integrated transistors for a buck converter using source down MOSFET
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Application No.: US14608391Application Date: 2015-01-29
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Publication No.: US09646965B2Publication Date: 2017-05-09
- Inventor: Jun Wang , Frank Baiocchi , Haian Lin
- Applicant: TEXAS INSTRUMENTS INCORPORATED
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent William B. Kempler; Charles A. Brill; Frank D. Cimino
- Main IPC: H01L27/088
- IPC: H01L27/088 ; H01L29/78 ; H02M3/155 ; H02M3/158

Abstract:
An integrated semiconductor transistor chip for use in a buck converter includes a high side transistor formed on the chip and comprising a laterally diffused metal oxide semiconductor (LDMOS) transistor and a low side transistor formed on the chip and comprising a source down metal oxide semiconductor field effect transistor (MOSFET). The chip also includes a substrate of the chip for use as a source for the low side transistor and an n-doped well for isolation of the high side transistor from the source of the low side transistor.
Public/Granted literature
- US20150214222A1 MONOLITHICALLY INTEGRATED TRANSISTORS FOR A BUCK CONVERTER USING SOURCE DOWN MOSFET Public/Granted day:2015-07-30
Information query
IPC分类: