Invention Grant
- Patent Title: Integrated circuits including dummy structures and methods of forming the same
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Application No.: US12726309Application Date: 2010-03-17
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Publication No.: US09646958B2Publication Date: 2017-05-09
- Inventor: Chien-Hsun Wang , Chih-Sheng Chang , Hsien-Hui Meng
- Applicant: Chien-Hsun Wang , Chih-Sheng Chang , Hsien-Hui Meng
- Applicant Address: TW
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW
- Agency: Hauptman Ham, LLP
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L27/02 ; H01L27/092 ; H01L27/105
Abstract:
An integrated circuit includes a core area. The core area has at least one edge region and a plurality of transistors disposed in the edge region. A plurality of dummy structures are disposed outside the core area and adjacent to the at least one edge region. Each channel of the transistors in a channel width direction faces at least one of the dummy structures.
Public/Granted literature
- US20110227188A1 INTEGRATED CIRCUITS INCLUDING DUMMY STRUCTURES AND METHODS OF FORMING THE SAME Public/Granted day:2011-09-22
Information query
IPC分类:
