Invention Grant
- Patent Title: Alignment structures and methods of forming same
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Application No.: US15161346Application Date: 2016-05-23
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Publication No.: US09646944B2Publication Date: 2017-05-09
- Inventor: Ching-Jung Yang , Hsien-Wei Chen
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L23/544 ; H01L23/31 ; H01L21/56

Abstract:
Embodiments of the present disclosure include interconnect structures and methods of forming interconnect structures. An embodiment is a method of forming an interconnect structure, the method including forming a first post-passivation interconnect (PPI) over a first substrate, forming a second PPI over the first substrate, and forming a first conductive connector on the first PPI. The method further includes forming a second conductive connector on the second PPI, and forming a molding compound on top surfaces of the first and second PPIs and surrounding portions of the first and second connectors, a first section of molding compound being laterally between the first and second connectors, the first section of molding compound having a curved top surface.
Public/Granted literature
- US20160268224A1 Alignment Structures and Methods of Forming Same Public/Granted day:2016-09-15
Information query
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