Invention Grant
- Patent Title: Metal-oxide semiconductor field effect transistor, method of fabricating the same, and semiconductor apparatus including the same
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Application No.: US14605017Application Date: 2015-01-26
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Publication No.: US09646891B2Publication Date: 2017-05-09
- Inventor: Jung-gil Yang , Tae-yong Kwon , Xingui Zhang , Sang-su Kim
- Applicant: Jung-gil Yang , Tae-yong Kwon , Xingui Zhang , Sang-su Kim
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2014-0016801 20140213
- Main IPC: H01L21/8238
- IPC: H01L21/8238 ; H01L29/207 ; H01L27/092 ; H01L29/78 ; H01L29/49 ; H01L29/201 ; H01L29/20 ; H01L21/8252 ; H01L21/8258 ; H01L27/06 ; H01L21/28 ; H01L29/66
Abstract:
Example embodiments relate to a metal-oxide semiconductor field effect transistor (MOSFET) of a high performance operating with a necessary threshold voltage while including a channel region formed based on a group III-V compound, and a method of manufacturing the MOSFET. The MOSFET includes a substrate, a semiconductor layer including a group III-V compound on the substrate, and a gate structure disposed on the semiconductor layer, and including a gate electrode formed based on metal and undergone an ion implantation process.
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