Invention Grant
- Patent Title: Semiconductor structure with shallow trench isolation and manufacturing method thereof
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Application No.: US14337562Application Date: 2014-07-22
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Publication No.: US09646871B2Publication Date: 2017-05-09
- Inventor: Che-Cheng Chang , Tung-Wen Cheng , Jui Fu Hseih , Mu-Tsang Lin
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee Address: TW Hsinchu
- Agency: WPAT, P.C., Intellectual Property Attorneys
- Agent Anthony King
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L21/762 ; H01L29/06 ; H01L29/78
Abstract:
A semiconductor structure includes a semiconductor substrate and a shallow trench isolation (STI). The STI includes a sidewall interfacing with the semiconductor substrate. The STI extrudes from a bottom portion of the semiconductor substrate, and the STI includes a bottom surface contacting the bottom portion of the semiconductor substrate; a top surface opposite to the bottom surface. The bottom surface includes a width greater than a width of the top surface.
Public/Granted literature
- US20160027684A1 SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF Public/Granted day:2016-01-28
Information query
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