Invention Grant
- Patent Title: High-pressure anneal
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Application No.: US14791784Application Date: 2015-07-06
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Publication No.: US09646850B2Publication Date: 2017-05-09
- Inventor: Wieland Pethe , Dirk Noack , Bernd Kallauch
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Amerson Law Firm, PLLC
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L23/48 ; H01L21/324 ; H01L21/28 ; H01L29/66 ; H01L21/67 ; F27B17/00
Abstract:
A method of treating a semiconductor device is provided including the steps of loading the semiconductor device in a processing chamber, pressurizing the processing chamber by supplying a processing gas from a pressure chamber to the processing chamber, performing a thermal anneal of the semiconductor device in the processing chamber, and depressurizing the processing chamber by supplying the processing gas from the processing chamber to the pressure chamber.
Public/Granted literature
- US20170011932A1 HIGH-PRESSURE ANNEAL Public/Granted day:2017-01-12
Information query
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