Invention Grant
- Patent Title: Method for producing a multilevel microelectronic structure
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Application No.: US14865792Application Date: 2015-09-25
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Publication No.: US09646846B2Publication Date: 2017-05-09
- Inventor: Philippe Coronel , Claire Fenouillet-Beranger
- Applicant: Commissariat A L'Energie Atomique et aux Energies Alternatives
- Applicant Address: FR Paris
- Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
- Current Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
- Current Assignee Address: FR Paris
- Agency: Oblon, McClelland, Maier & Neustadt
- Priority: FR1459059 20140925
- Main IPC: H01L21/3105
- IPC: H01L21/3105 ; H01L27/06 ; H01L21/822
Abstract:
A method for producing a multilevel microelectronic structure includes formation of a first layer, production of at least one second layer at least partially covering the first layer, and production of at least one microelectronic pattern on or in the second layer. The second layer is formed so as to generate a mechanical stress in it, the first layer forms, for the second layer, a support preventing relaxation of the stress. After the production of at least one microelectronic pattern, the method includes at least elimination of at least part of the first layer, thus making it possible to relax at least part of the mechanical stress on the second layer so that at least a portion of the second layer covering the eliminated part of the first layer moves, and fixing the moved portion of the second layer to a structure part that has remained fixed.
Public/Granted literature
- US20160093504A1 METHOD FOR PRODUCING A MULTILEVEL MICROELECTRONIC STRUCTURE Public/Granted day:2016-03-31
Information query
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