There are prepared a semiconductor substrate having a first main surface and a second main surface, and an adhesive tape having a third main surface and a fourth main surface, the first main surface having a maximum diameter of not less than 100 mm. The semiconductor substrate fixed to the third main surface of the adhesive tape is placed in an accommodation chamber. The accommodation chamber is evacuated while maintaining a temperature of the adhesive tape at not less than 100° C. An electrode is formed on the second main surface after the step of reducing the temperature of the semiconductor substrate. The step of evacuating the accommodation chamber includes a step of evacuating the accommodation chamber while maintaining the temperature of the adhesive tape at not less than 100° C. with a space being provided between the fourth main surface of the adhesive tape and the substrate holding unit.