Invention Grant
- Patent Title: Forming patterned graphene layers
-
Application No.: US14699455Application Date: 2015-04-29
-
Publication No.: US09646833B2Publication Date: 2017-05-09
- Inventor: Ali Afzali-Ardakani , Ahmed Maarouf , Glenn J. Martyna , Katherine Saenger
- Applicant: International Business Machines Corporation , Egypt Nanotechnologies Center (EGNC)
- Applicant Address: US NY Armonk EG
- Assignee: International Business Machines Corporation,Egypt Nanotechnologies Center
- Current Assignee: International Business Machines Corporation,Egypt Nanotechnologies Center
- Current Assignee Address: US NY Armonk EG
- Agency: Ryan, Mason & Lewis, LLP
- Main IPC: H01L21/04
- IPC: H01L21/04 ; H01L21/324 ; H01L21/02 ; B32B15/20 ; B32B9/00 ; B32B3/12 ; C23F1/02 ; B32B3/00 ; B82Y40/00 ; C01B31/04 ; H01B13/00 ; B82Y30/00 ; B32B9/04

Abstract:
An apparatus and method for forming a patterned graphene layer on a substrate. One such method includes forming at least one patterned structure on a substrate; applying a layer of graphene on top of the at least one patterned structure on the substrate; heating the layer of graphene on top of the at least one patterned structure to remove one or more graphene regions proximate to the at least one patterned structure; and removing the at least one patterned structure to produce a patterned graphene layer on the substrate, wherein the patterned graphene layer on the substrate provides carrier mobility for electronic devices.
Public/Granted literature
- US20150279677A1 Forming Patterned Graphene Layers Public/Granted day:2015-10-01
Information query
IPC分类: