Invention Grant
- Patent Title: Manufacturing method of semiconductor device
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Application No.: US13402940Application Date: 2012-02-23
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Publication No.: US09646829B2Publication Date: 2017-05-09
- Inventor: Shinji Ohno , Yuichi Sato , Junichi Koezuka
- Applicant: Shinji Ohno , Yuichi Sato , Junichi Koezuka
- Applicant Address: JP Kanagawa-ken
- Assignee: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- Current Assignee: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- Current Assignee Address: JP Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office
- Agent Eric J. Robinson
- Priority: JP2011-047879 20110304
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L21/36 ; H01L21/02 ; H01L29/786
Abstract:
A method for manufacturing a highly reliable semiconductor device with less change in threshold voltage is provided. An insulating film from which oxygen can be released by heating is formed in contact with an oxide semiconductor layer, and light irradiation treatment is performed on a gate electrode or a metal layer formed in a region which overlaps with the gate electrode, so that oxygen is added into the oxide semiconductor layer in a region which overlaps with the gate electrode. Accordingly, oxygen vacancies or interface states in the oxide semiconductor layer in a region which overlaps with the gate electrode can be reduced.
Public/Granted literature
- US20120225543A1 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE Public/Granted day:2012-09-06
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