Invention Grant
- Patent Title: Focused ion beam system and method of making focal adjustment of ion beam
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Application No.: US14533494Application Date: 2014-11-05
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Publication No.: US09646805B2Publication Date: 2017-05-09
- Inventor: Tomohiro Mihira
- Applicant: JEOL Ltd.
- Applicant Address: JP Tokyo
- Assignee: JEOL Ltd.
- Current Assignee: JEOL Ltd.
- Current Assignee Address: JP Tokyo
- Agency: The Webb Law Firm
- Priority: JP2013-234900 20131113
- Main IPC: H01J37/28
- IPC: H01J37/28 ; H01J37/153 ; H01J37/304 ; H01J37/21 ; H01J37/30

Abstract:
A focused ion beam system is offered which can make a focal adjustment without relying on the structure of a sample while suppressing damage to the sample to a minimum. Also, a method of making this focal adjustment is offered. The focused ion beam system has an ion source for producing an ion beam, a lens system for focusing the beam onto the sample, a detector for detecting secondary electrons emanating from the sample, and a controller for controlling the lens system. The controller is operative to provide control such that the sample is irradiated with the ion beam without scanning the beam and that a focus of the ion beam is varied by varying the intensity of the objective lens during the ion beam irradiation. Also, the controller measures the intensity of a signal indicating secondary electrons emanating from the sample while the intensity of the objective lens is being varied. Furthermore, the controller makes a focal adjustment of the ion beam on the basis of the intensity of the objective lens obtained when the measured intensity of the signal indicating secondary electrons is minimal.
Public/Granted literature
- US20150136978A1 Focused Ion Beam System and Method of Making Focal Adjustment of Ion Beam Public/Granted day:2015-05-21
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