Invention Grant
- Patent Title: Semiconductor device with channel switching structure and method of making same
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Application No.: US13558287Application Date: 2012-07-25
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Publication No.: US09646710B2Publication Date: 2017-05-09
- Inventor: Michael Sommer
- Applicant: Michael Sommer
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Slater Matsil, LLP
- Main IPC: G11C17/00
- IPC: G11C17/00 ; G11C17/10 ; H01L27/112
Abstract:
Embodiments relate to a semiconductor device, including a channel area; a gate line extending along the channel area so that the channel area can be set into a conductive state by activating the gate line; a plurality of terminals including an electrical connection to the channel area, so that the plurality of terminals is connectable to a predetermined voltage by activating the gate line.
Public/Granted literature
- US20120286334A1 Semiconductor Device and Method of Making Same Public/Granted day:2012-11-15
Information query
