Invention Grant
- Patent Title: Memory systems including nonvolatile memory devices and dynamic access methods thereof
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Application No.: US14287580Application Date: 2014-05-27
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Publication No.: US09646705B2Publication Date: 2017-05-09
- Inventor: Sangkwon Moon , Kyung Ho Kim , Jihong Kim , Jaeyong Jeong
- Applicant: Sangkwon Moon , Kyung Ho Kim , Jihong Kim , Jaeyong Jeong
- Applicant Address: KR Gyeonggi-Do KR Seoul
- Assignee: SAMSUNG ELECTRONICS CO., LTD.,SNU R&DB FOUNDATION
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.,SNU R&DB FOUNDATION
- Current Assignee Address: KR Gyeonggi-Do KR Seoul
- Agency: Harness, Dickey & Pierce, PLC
- Priority: KR10-2013-0067231 20130612; KR10-2014-0007350 20140121
- Main IPC: G11C16/16
- IPC: G11C16/16 ; G11C16/26 ; G11C11/56 ; G11C16/34
Abstract:
A method of operating a memory device includes: determining an erase mode based on a number of erase cycles performed on a memory block and an erase voltage utilized to perform each erase cycle; and setting an erase voltage level for executing an erase operation on the memory block based on the determined erase mode.
Public/Granted literature
- US20140369124A1 MEMORY SYSTEMS INCLUDING NONVOLATILE MEMORY DEVICES AND DYNAMIC ACCESS METHODS THEREOF Public/Granted day:2014-12-18
Information query
