Invention Grant
- Patent Title: Low noise amplifier with noise and linearity improvement
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Application No.: US14882470Application Date: 2015-10-14
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Publication No.: US09641130B2Publication Date: 2017-05-02
- Inventor: Fan-Hsiu Huang , Jui-Chieh Chiu , Chih-Wen Huang
- Applicant: WIN Semiconductors Corp.
- Applicant Address: TW Tao Yuan
- Assignee: WIN Semiconductors Corp.
- Current Assignee: WIN Semiconductors Corp.
- Current Assignee Address: TW Tao Yuan
- Agent Winston Hsu; Scott Margo
- Priority: TW104115849A 20150519
- Main IPC: H03F3/16
- IPC: H03F3/16 ; H03F1/02 ; H03F1/26 ; H03F3/193 ; H03F1/32 ; H03F1/22

Abstract:
A low noise amplifier (LNA) has been disclosed for the noise and linearity performance improvement. The LNA includes an amplifying transistor and an auxiliary transistor. The amplifying transistor includes a first terminal for receiving an input signal of the LNA, a second terminal for outputting an output signal of the LNA, and a third terminal. The auxiliary transistor has a first terminal, a second terminal coupled to the second terminal of the amplifying transistor, and a third terminal electrically connected to the first terminal of the amplifying transistor.
Public/Granted literature
- US20160344345A1 Low Noise Amplifier With Noise And Linearity Improvement Public/Granted day:2016-11-24
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