Invention Grant
- Patent Title: Charge pump circuit
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Application No.: US15135581Application Date: 2016-04-22
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Publication No.: US09641069B1Publication Date: 2017-05-02
- Inventor: Zhirong Chen , Wing Chun Chan , Wai Kwong Lee , Wai Sum Choi
- Applicant: Solomon Systech (Shenzhen) Limited
- Applicant Address: CN Shenzhen
- Assignee: SOLOMON SYSTECH (SHENZHEN) LIMITED
- Current Assignee: SOLOMON SYSTECH (SHENZHEN) LIMITED
- Current Assignee Address: CN Shenzhen
- Priority: CN201610243415 20160418
- Main IPC: H02M3/07
- IPC: H02M3/07

Abstract:
A charge pump circuit includes a plurality of stages. Each stage of the charge pump circuit includes: a first transistor, drain of the first transistor being output of the stage, source of the first transistor being input of the stage; a second transistor, gate of the second transistor being connected to source of the first transistor, drain of the second transistor being connected to drain of the first transistor, source of the second transistor being connected to gate of the first transistor, body of the second transistor being connected to body of the first transistor; and a third transistor, gate of the third transistor being connected to drain of the first transistor, drain of the third transistor being connected to source of the first transistor, source of the third transistor being connected to body of the first transistor and body of the third transistor.
Information query
IPC分类: