Invention Grant
- Patent Title: Double self-aligned phase change memory device structure
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Application No.: US14437189Application Date: 2013-10-28
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Publication No.: US09640757B2Publication Date: 2017-05-02
- Inventor: Jun-Fei Zheng
- Applicant: ENTEGRIS, INC.
- Applicant Address: US MA Billerica
- Assignee: Entegris, Inc.
- Current Assignee: Entegris, Inc.
- Current Assignee Address: US MA Billerica
- Agency: Entegris, Inc. Legal Dept.
- Agent Nidhi G. Kissoon; John E. Pillion
- International Application: PCT/US2013/067145 WO 20131028
- International Announcement: WO2014/070682 WO 20140508
- Main IPC: H01L45/00
- IPC: H01L45/00
Abstract:
A double self-aligned phase change memory device structure, comprising spaced-apart facing phase change memory film members symmetrically arranged with respect to one another, each of the phase change memory film members at an upper portion thereof being in contact with a separate conductive element, and each of the phase change memory film members being in a range of from 5 nm to 25 nm in thickness. Also described are various methods of making such phase change memory device structure.
Public/Granted literature
- US20150280115A1 DOUBLE SELF-ALIGNED PHASE CHANGE MEMORY DEVICE STRUCTURE Public/Granted day:2015-10-01
Information query
IPC分类:
