Invention Grant
- Patent Title: Method for fabricating semiconductor device
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Application No.: US15350113Application Date: 2016-11-14
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Publication No.: US09640662B2Publication Date: 2017-05-02
- Inventor: Hao-Ming Lee
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Priority: TW104102601A 20150126
- Main IPC: H01L21/8238
- IPC: H01L21/8238 ; H01L27/12 ; H01L29/78 ; H01L21/84
Abstract:
A method for fabricating semiconductor device includes the steps of: providing a substrate having at least one fin-shaped structure thereon, wherein the fin-shaped structure comprises a top portion and a bottom portion; removing part of the bottom portion of the fin-shaped structure; forming an epitaxial layer on the substrate to surround the bottom portion of the fin-shaped structure; transforming the bottom portion of the fin-shaped structure into the epitaxial layer; and removing part of the epitaxial layer.
Public/Granted literature
- US20170062430A1 METHOD FOR FABRICATING SEMICONDUCTOR DEVICE Public/Granted day:2017-03-02
Information query
IPC分类:
