Invention Grant
- Patent Title: Schottky contact
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Application No.: US13414286Application Date: 2012-03-07
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Publication No.: US09640627B2Publication Date: 2017-05-02
- Inventor: Helmut Hagleitner , Saptharishi Sriram
- Applicant: Helmut Hagleitner , Saptharishi Sriram
- Applicant Address: US NC Durham
- Assignee: Cree, Inc.
- Current Assignee: Cree, Inc.
- Current Assignee Address: US NC Durham
- Agency: Myers Bigle, P.A.
- Main IPC: H01L21/28
- IPC: H01L21/28 ; H01L29/47 ; H01L21/285 ; H01L29/872 ; H01L29/778 ; H01L29/20 ; H01L29/40 ; H01L29/45
Abstract:
The present disclosure relates to a Schottky contact for a semiconductor device. The semiconductor device has a body formed from one or more epitaxial layers, which reside over a substrate. The Schottky contact may include a Schottky layer, a first diffusion barrier layer, and a third layer. The Schottky layer is formed of a first metal and is provided over at least a portion of a first surface of the body. The first diffusion barrier layer is formed of a silicide of the first metal and is provided over the Schottky layer. The third layer is formed of a second metal and is provided over the first diffusion barrier layer. In one embodiment, the first metal is nickel, and as such, the silicide is nickel silicide. Various other layers may be provided between or above the Schottky layer, the first diffusion barrier layer, and the third layer.
Public/Granted literature
- US20130234278A1 SCHOTTKY CONTACT Public/Granted day:2013-09-12
Information query
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